US Patent Issued to SAMSUNG ELECTRONICS on Feb. 11 for "Integrated circuit device including metal-oxide semiconductor transistors" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,282, issued on Feb. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit device including metal-oxide semiconductor transistors" was invented by Jinhyeok Song (Incheon, South Korea) and Mingeun Song (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin activ...