ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,322, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Vertical memory devices" was invented by Donghwan Kim (Seongnam-si, South Korea), Younghwan Son (Hwaseong-si, South Korea), Shinhwan Kwan (Suwon-si, South Korea) and Jeehoon Han (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical memory device includes gate electrodes, a channel, a first conductive through via, and insulation structures. The gate electrodes are spaced apart from each other on a substrate in a first direction substantially perpendicular to an upper surface of the substrate, and may be stacked in a staircase s...