US Patent Issued to SAMSUNG ELECTRONICS on Feb. 10 for "Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,333, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same" was invented by Byounghoon Lee (Suwon-si, South Korea), Jongho Park (Suwon-si, South Korea), Musarrat Hasan (Sejong-si, South Korea), Wandon Kim (Seongnam-si, South Korea) and Seungkeun Cha (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a channel on or in the substrate, a source/drain pair respectively on opposite ends of the channel, and a gate structure on the channel between the source/...