US Patent Issued to SAMSUNG ELECTRONICS on Feb. 10 for "Semiconductor device including 2D material layers" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,388, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including 2D material layers" was invented by Kijoon Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes channel structures spaced apart in a vertical direction; lower/upper first gate insulation patterns contacting lower/upper surfaces of the channel structures; a gate electrode surrounding lower/upper surfaces and a sidewall of the channel structures; and source/drain layers at sides of the gate electrode, wherein the channel structures include first/second 2D material layers stac...