ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,409, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor device" was invented by Jongchul Park (Seoul, South Korea) and Hyonwook Ra (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first gate electrode and a second gate electrode which are each on a substrate and extend in a first direction, first and second source/drain patterns spaced apart from the first and second gate electrodes in a second direction which crosses the first direction, and an active contact in common connection with top surfaces of the first source/drain pattern and t...