ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,342, issued on Feb. 10, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Method of fabricating a semiconductor device" was invented by Jiye Baek (Suwon-si, South Korea) and Yi Rang Lim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes sequentially stacking a sacrificial layer and a support layer on a substrate, forming bottom electrodes penetrating the sacrificial layer and the support layer to come into contact with the substrate, patterning the support layer to form a support pattern that connects the bottom electrodes to each other, removing the sac...