ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,546, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device having segmented cell bit line" was invented by Juwon Lim (Suwon-si, South Korea), Younghun Seo (Suwon-si, South Korea) and Sang-Yun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a memory cell array located in a first layer and including a word line, a cell bit line, and a memory cell located in a region where the word line and the cell bit line are crossed; and a bit line sense amplifier located in a second layer, different from the first layer. The bit line sens...