US Patent Issued to SAMSUNG ELECTRONICS on Dec. 9 for "Semiconductor devices including source/drain layers and methods of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,578, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices including source/drain layers and methods of manufacturing the same" was invented by Haejun Yu (Osan-si, South Korea), Kyungin Choi (Seoul, South Korea), Sungmin Kim (Incheon, South Korea), Seunghun Lee (Hwaseong-si, South Korea) and Jinbum Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second channels, first and second gate structures, first and second source/drain layers, first and second fin spacers, and first and second etch stop patterns. The first channels are dispo...