US Patent Issued to SAMSUNG ELECTRONICS on Dec. 9 for "Semiconductor devices having a gate isolation layer and methods of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. RE50,699, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices having a gate isolation layer and methods of manufacturing the same" was invented by Yong Ho Jeon (Hwaseong-si, South Korea), Jung Hyun Kim (Hwaseong-si, South Korea), Sung Woo Myung (Hwaseong-si, South Korea), Young Mook Oh (Hwaseong-si, South Korea) and Dong Seok Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices are provided. A semiconductor device includes a channel region that protrudes from a substrate. The semiconductor device includes a gate line on the channel region. Moreover, the ...