ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,573, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device including air gap" was invented by Sooyeon Hong (Yongin-si, South Korea), Deokhan Bae (Suwon-si, South Korea), Juhun Park (Seoul, South Korea), Yuri Lee (Hwaseong-si, South Korea) and Yoonyoung Jung (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of the disclosure includes an active pattern extending on a substrate in a first direction, a gate structure extending on the active pattern in a second direction intersecting the first direction, a source/drain region disposed on at least one side of...