ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,593, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Method of manufacturing semiconductor device" was invented by Chankyo Park (Suwon-si, South Korea), Seungchul Oh (Suwon-si, South Korea), Jaeho Jeon (Suwon-si, South Korea) and Sunggi Hur (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device is provided. The method includes: forming, on a substrate, dummy gate structures extending in a first direction, spaced apart from one another along a second direction, forming a first oxide layer on the dummy gate structures, etching an upper portion of th...