ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,543, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Method for manufacturing semiconductor memory device" was invented by Ho Kyun An (Hwaseong-si, South Korea), Su Min Cho (Seoul, South Korea), Bum Soo Kim (Gwacheon-si, South Korea) and Ha Young Kim (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor memory device comprises providing a substrate, etching a portion of the substrate that forms a trench therein, forming an element isolation film that fills the trench and defines an active area, herein the element isolation film includes a first liner ...