ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,556, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Memory devices" was invented by Byungsoo Kim (Anyang-si, South Korea), Sangwan Nam (Hwaseong-si, South Korea), MinJae Seo (Suwon-si, South Korea) and Bongsoon Lim (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first cell array region and a second cell array region separated by a separation region, each including at least one memory block having a plurality of gate electrode layers stacked in a first direction. The gate electrode layers include an upper select electrode layer including a plurality of string selec...