US Patent Issued to SAMSUNG ELECTRONICS on Dec. 9 for "Memory device reducing i/o signal lines through i/o mapping connection and memory system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,493,548, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Memory device reducing i/o signal lines through i/o mapping connection and memory system including the same" was invented by Sang-Won Park (Suwon-si, South Korea), Jooyong Park (Suwon-si, South Korea), Seokmin Yoon (Suwon-si, South Korea) and Bongsoon Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a memory system including a memory device and a memory controller. The memory device includes a package of a first memory chip configured to receive input/output signals through first input/output pads and a second memory ...