ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,236, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device and system device including the same" was invented by Yunseok Yang (Suwon-si, South Korea), Eungchang Lee (Suwon-si, South Korea), Seula Ryu (Suwon-si, South Korea), Minhwan An (Suwon-si, South Korea), Yunkyeong Jeong (Suwon-si, South Korea) and Chul-Hwan Choo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a base die that includes a data signal bump configured to receive a data signal, a first memory stack that includes first memory dies sequentially stacked on the base die, and a second memory st...