US Patent Issued to SAMSUNG ELECTRONICS on Dec. 9 for "Integrated circuit devices including lower interconnect metal layers at cell boundaries and methods of forming the same" (New York, Virginia Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,430, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit devices including lower interconnect metal layers at cell boundaries and methods of forming the same" was invented by Jintae Kim (Clifton Park, N.Y.), Panjae Park (Halfmoon, N.Y.) and Kang-Ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit devices are provided. An integrated circuit device includes a substrate and a cell that has a plurality of transistors. The transistors include an upper transistor having an upper channel region. Moreover, the transistors include a lower transistor between the sub...