US Patent Issued to SAMSUNG ELECTRONICS on Dec. 9 for "Flash memory for performing margin read test operation and margin read test system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,263, issued on Dec. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Flash memory for performing margin read test operation and margin read test system including the same" was invented by Gyuseong Kim (Suwon-si, South Korea) and Hyun-Jin Shin (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A flash memory includes a first memory cell connected with a selected word line and a first bit line, a second memory cell connected with the selected word line and a second bit line, a sense amplifier that provides a sensing line with a sensing current for sensing data stored in the first memory cell or the second mem...