ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,135, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor memory device" was invented by Jin Woo Han (Suwon-si, South Korea), Hyun Geun Choi (Suwon-si, South Korea), Ki Seok Lee (Suwon-si, South Korea) and Seok Han Park (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided a semiconductor memory device. The semiconductor memory device includes a substrate, a gate electrode on the substrate, a bit line on the substrate, a cell semiconductor pattern on a side of the gate electrode and electrically connected to the bit line, a capacitor structure including a first electrode ele...