US Patent Issued to SAMSUNG ELECTRONICS on Dec. 30 for "Semiconductor device having an isolation structure between adjacent source/drain regions" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,982, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having an isolation structure between adjacent source/drain regions" was invented by Youncheol Jeong (Hwaseong-si, South Korea), Jaeung Koo (Yongin-si, South Korea), Kwansung Kim (Yongin-si, South Korea), Seungyoon Kim (Suwon-si, South Korea), Boun Yoon (Seoul, South Korea), Jooho Jung (Suwon-si, South Korea) and Sukbae Joo (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region extending in a first direction on a substrate, a plurality of channel layers vertically spaced ...