ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,428, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Jihoon Kim (Suwon-si, South Korea), Minki Kim (Suwon-si, South Korea), Wonil Lee (Suwon-si, South Korea) and Hyuekjae Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises lower and upper structures. The lower structure includes a first semiconductor substrate, a first pad, and a first dielectric layer. The upper structure includes a second semiconductor substrate,...