US Patent Issued to SAMSUNG ELECTRONICS on Dec. 30 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,972, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Jae-Jung Kim (Suwon-si, South Korea), Chanhyeong Lee (Suwon-si, South Korea), Jinkyu Jang (Suwon-si, South Korea), Rakhwan Kim (Suwon-si, South Korea) and Dongsoo Lee (Gunpo-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a channel pattern stacked on a substrate and a gate electrode on the substrate. The channel pattern includes semiconductor patterns. The gate electrode extends to cross the channel pattern. The gate electrode may i...