ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,898, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device and data storage system including the same" was invented by Sangho Rha (Seongnam-si, South Korea), Iksoo Kim (Yongin-si, South Korea), Jiwoon Im (Hwaseong-si, South Korea), Byungsun Park (Suwon-si, South Korea) and Seonkyu Shin (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a memory cell structure on a substrate, and a dummy structure on a side of the memory cell structure. The memory cell structure includes a memory stack structure including interlayer insulating layers and gate e...