ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,880, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Jongmyung Yoo (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a lower electrode on the substrate and extending in a vertical direction, a supporter surrounding at least a portion of sidewalls of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the supporter, an upper electrode on the lower electrode and at least a portion of the dielectric layer, wherein the dielectric layer is between the upper elect...