ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,967, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device, nonvolatile memory device including the same, and electronic system including the same" was invented by Young-Joo Jeon (Seoul, South Korea), Byung Joo Go (Hwaseong-si, South Korea), Hee-Sung Kam (Anyang-si, South Korea) and Su Jin Park (Gwangmyeong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate includes an active area; a gate structure intersecting the active area; a source/drain area disposed on the active area; a lower contact disposed on the source/drain area or the gate ...