ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,157, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Non-volatile memory device including sub-blocks having different sizes and storage device" was invented by Eun Chu Oh (Suwon-si, South Korea) and Beomkyu Shin (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device is provided. The non-volatile memory device includes: sub-blocks provided on a substrate. The sub-blocks include: a first sub-block connected to a first word line group including a first number of word lines; and a second sub-block connected to a second word line group including a second number of word ...