ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,896, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Method of manufacturing integrated circuit device" was invented by Jinseo Choi (Suwon-si, South Korea), Sohyang Lee (Suwon-si, South Korea), Jeongmin Jin (Suwon-si, South Korea) and Sohee Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an integrated circuit device includes forming, on a substrate, a plurality of bit line structures, which each include a bit line and an insulating capping pattern, and a plurality of contact plugs between the plurality of bit line structures, forming a plurality of recess ...