US Patent Issued to SAMSUNG ELECTRONICS on Dec. 30 for "Method and system for repairing a dynamic random access memory (dram) of memory device" (Indian Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,180, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Method and system for repairing a dynamic random access memory (dram) of memory device" was invented by Nidhi Shukla (Bengaluru, India), Preeti Joseph (Bengaluru, India), Hyunbum Cho (Bengaluru, India) and Yongjae Shin (Bengaluru, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various example embodiments are directed to a method, device, and system for repairing a Dynamic Random Access Memory (DRAM) memory device. The method includes reserving a memory space within the DRAM memory device, the reserved memory space including a plurality of spare ro...