US Patent Issued to SAMSUNG ELECTRONICS on Dec. 30 for "Integrated circuit including static random access memory device" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,877, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit including static random access memory device" was invented by Eo Jin Lee (Suwon-si, South Korea), Ho Young Tang (Suwon-si, South Korea), Tae-Hyung Kim (Suwon-si, South Korea) and Dae Young Moon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a static random access memory (SRAM) device. The SRAM device includes an SRAM unit cell that includes a first output node to which a first pull-up transistor, a first pull-down transistor, and a second pull-down transistor are commonly connected, a...