US Patent Issued to SAMSUNG ELECTRONICS on Dec. 30 for "Hard mask film including graphene layer intercalated structure and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,316, issued on Dec. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Hard mask film including graphene layer intercalated structure and manufacturing method thereof" was invented by Sungjoo An (Yongin-si, South Korea), Seran Oh (Hwaseong-si, South Korea) and Yeonuk Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A hard mask film for use in a process for manufacture of a semiconductor device, comprises a first graphene layer; a first amorphous carbon layer formed on the first graphene layer; a second graphene layer formed on the first amorphous carbon layer; and a second amorphous carbon layer...