ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,483, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device and method for manufacturing the same" was invented by Sung Il Park (Suwon-si, South Korea), Jae Hyun Park (Hwaseong-si, South Korea), Do Young Choi (Hwaseong-si, South Korea), Yoshinao Harada (Hwaseong-si, South Korea) and Dae Won Ha (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a substrate, a first active pattern on the substrate and extending in a first direction, a second active pattern extending in the first direction spaced apart from the substrate, a gate electrode extending ...