US Patent Issued to SAMSUNG ELECTRONICS on Dec. 23 for "Memory device including page buffer circuit" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,868, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device including page buffer circuit" was invented by Jaehue Shin (Suwon-si, South Korea), Yongsung Cho (Suwon-si, South Korea) and Daeseok Byeon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including a plurality of memory cells, and a page buffer circuit including a plurality of page buffer units respectively connected with the memory cells through a plurality of bit lines. A sensing node is connected to a bit line for each buffer circuit. The plurality of page buffer units are r...