ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,451, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).
"Integrated circuit device" was invented by Gyeom Kim (Suwon-si, South Korea), Dahye Kim (Suwon-si, South Korea), Jinbum Kim (Suwon-si, South Korea) and Kyungbin Chun (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a fin-type active region, a channel region on the fin-type active region, a gate line surrounding the channel region, an outer insulating spacer covering a sidewall of the gate line, a source/drain region on the fin-type active region, wherein the source/drain region includes a buff...