US Patent Issued to SAMSUNG ELECTRONICS on Dec. 23 for "Computational storage acceleration using DRAM sharing between SSD in all-flash array" (Irish Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,504,926, issued on Dec. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Computational storage acceleration using DRAM sharing between SSD in all-flash array" was invented by Amit Berman (Tel-Aviv, Ireland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for accelerating computational storage in an all-flash-array that comprises a plurality of solid state drives (SSDs) connected in a ring topology. The method includes receiving, by a controller of a first SSD, a request to read or write data from a dynamic random access memory (DRAM) associated with the first SSD, creating a packet that includes an identifier for the fir...