US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Semiconductor memory device having bit lines with different height" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,054, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).

"Semiconductor memory device having bit lines with different height" was invented by Junhyeok Ahn (Suwon-si, South Korea) and Myeong-Dong Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include a device isolation pattern in a substrate and defining a first active section of the substrate and a second active section of the substrate, a first bit line crossing the center of the first active section, a second bit line crossing a center of the second active section, a bit-line contact between the first bit ...