US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Semiconductor device including vertical memory structure and separation structure each including side surface slope changing portion and data storage system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,428, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including vertical memory structure and separation structure each including side surface slope changing portion and data storage system including the same" was invented by Giyong Chung (Seoul, South Korea), Seungyoon Kim (Seoul, South Korea), Jaeryong Sim (Hwaseong-si, South Korea) and Jeehoon Han (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack structure and an insulation structure that covers the stack structure, a vertical memory structure that penetrates the stack struct...