US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Semiconductor device including single-crystalline silicon oxide barrier pattern" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,468, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including single-crystalline silicon oxide barrier pattern" was invented by Yongjun Nam (Suwon-si, South Korea), Sangmoon Lee (Suwon-si, South Korea), Jinbum Kim (Suwon-si, South Korea) and Hyojin Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, a source/drain patter...