ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,466, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Junmo Park (Seoul, South Korea), Yeonho Park (Seoul, South Korea), WookHyun Kwon (Yongin-si, South Korea) and Kern Rim (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate including first and second active regions, which are adjacent to each other, first and second active patterns provided on the first and second active regions, respectively, and a gate electrode extended to cross the first and second active patterns. The gate electrode may include first an...