ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,463, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device" was invented by Dahye Kim (Seoul, South Korea), Sujin Jung (Hwaseong-si, South Korea), Ingyu Jang (Seoul, South Korea) and Jinbum Kim (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin-type active region that protrudes from a substrate and extends in a first direction, a plurality of channel layers on the fin-type active region that are spaced apart from each other in a second direction that is perpendicular to an upper surface of the substrate, a gate structure that intersects the f...