US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Nonvolatile memory device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,433, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).

"Nonvolatile memory device and method for fabricating the same" was invented by Soodoo Chae (Seongnam-si, South Korea), Myoungbum Lee (Seoul, South Korea), HuiChang Moon (Yongin-si, South Korea), Hansoo Kim (Suwon-si, South Korea), JinGyun Kim (Yongin-si, South Korea), Kihyun Kim (Hwaseong-si, South Korea), Siyoung Choi (Seongnam-si, South Korea) and Hoosung Cho (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a pluralit...