US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Memory device including page buffer circuit" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,838, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device including page buffer circuit" was invented by Yongsung Cho (Suwon-si, South Korea), Inho Kang (Suwon-si, South Korea), Insu Kim (Suwon-si, South Korea) and Jaehue Shin (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including a plurality of memory cells, and a page buffer circuit including a plurality of page buffer units respectively connected to the plurality of memory cells via a plurality of bit lines, and a plurality of cache latches respectively corresponding to the plura...