US Patent Issued to SAMSUNG ELECTRONICS on Dec. 2 for "Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layers" (South Korean, American Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,502, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layers" was invented by Byounghak Hong (Albany, N.Y.), Gunho Jo (Clifton Park, N.Y.), Sooyoung Park (Clifton Park, N.Y.), Hyoeun Park (Cohoes, N.Y.), WookHyun Kwon (Hwaseong-si, South Korea), Jaehong Lee (Albany, N.Y.) and Kang-ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit devices including a bipolar junction transistor (BJT) and/or a P-N junction diode are provided. The integrated circuit devices may include a first stack including first...