ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,079, issued on Dec. 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device manufacturing method" was invented by Eun Hyea Ko (Suwon-si, South Korea), Hoon Han (Anyang-si, South Korea), Byung Keun Hwang (Seongnam-si, South Korea), Jae Woon Kim (Seoul, South Korea), Jeong Ho Mun (Yongin-si, South Korea), Younghun Sung (Seoul, South Korea), Hyun-Ji Song (Anyang-si, South Korea) and Youn Joung Cho (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench t...