US Patent Issued to SAMSUNG ELECTRONICS on Dec. 16 for "Semiconductor device including different gate dielectric layers and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,693, issued on Dec. 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including different gate dielectric layers and method for manufacturing the same" was invented by Young Mok Kim (Yongin-si, South Korea), Kyung Lyong Kang (Hwaseong-si, South Korea), Jun Gu Kang (Hwaseong-si, South Korea) and Yong Sang Jeong (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate including first and second regions thereon; a first active region in the first region; an active pattern protruding from the first active region; a second active region in the secon...