ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,599, issued on Dec. 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Gyeonggi-do, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Haegeon Jung (Yongin-si, South Korea), Taeyong Kwon (Suwon-si, South Korea), Kwang-Yong Yang (Seoul, South Korea), Youngmook Oh (Hwaseong-si, South Korea), Bokyoung Lee (Hwaseong-si, South Korea), Seung Mo Ha (Seoul, South Korea) and Hyunggoo Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a first memory cell and a second memory cell, the first and second memory cells being adjacent to each other in a first d...