ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,672, issued on Dec. 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Yong Uk Jeon (Suwon-si, South Korea), Kyung Ho Kim (Suwon-si, South Korea), Ki Hwan Kim (Suwon-si, South Korea), Kang Hun Moon (Suwon-si, South Korea) and Cho Eun Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes: an active pattern extending in on a substrate; nanosheets stacked on the active pattern; a gate electrode on the active pattern and surrounding the nanosheets; a source/drain trench on the active pattern adjacent the...