US Patent Issued to SAMSUNG ELECTRONICS on Dec. 16 for "Non-volatile memory devices with dummy channel structures in contact region and associated systems" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,171, issued on Dec. 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Non-volatile memory devices with dummy channel structures in contact region and associated systems" was invented by Junhyoung Kim (Seoul, South Korea), Kangmin Kim (Hwaseong-si, South Korea), Taemin Eom (Hwaseong-si, South Korea), Seungmin Lee (Seoul, South Korea) and Changsun Hwang (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a cell array region and a contact region; a plurality of gate electrodes arranged on the substrate in a first direction perpendicular to an upper surfa...