US Patent Issued to SAMSUNG ELECTRONICS on Aug. 5 for "Vertical-type non-volatile memory devices having dummy channel holes" (South Korean Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. RE50,524, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Vertical-type non-volatile memory devices having dummy channel holes" was invented by Chang-hyun Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical-type nonvolatile memory device is provided in which differences between the sizes of channel holes in which channel structures are formed are reduced. The vertical-type nonvolatile memory device includes a substrate having channel hole recess regions in a surface thereof. Channel structures vertically protrude from the surface of the substrate on ones of the channel hole recess ...