ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,670, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Thin film structure and semiconductor device comprising the same" was invented by Dukhyun Choe (Suwon-si, South Korea), Hyangsook Lee (Suwon-si, South Korea), Junghwa Kim (Yongin-si, South Korea), Eunha Lee (Seoul, South Korea), Sanghyun Jo (Seoul, South Korea) and Jinseong Heo (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which greater than112less than crystal orientation is alig...