ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,626, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Semiconductor memory device, method for fabricating the same and electronic system including the same" was invented by Min Jae Oh (Hwaseong-si, South Korea), Ik Soo Kim (Yongin-si, South Korea), Sang Ho Rha (Seongnam-si, South Korea) and Ji Woon Im (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a cell substrate, a mold structure including a plurality of gate electrodes stacked on the cell substrate, the gate electrodes including a first ground selection line, a second ground selection line and a pluralit...