US Patent Issued to SAMSUNG ELECTRONICS on Aug. 5 for "Semiconductor device including plurality of channel layers" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,668, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including plurality of channel layers" was invented by Keunhwi Cho (Seoul, South Korea), Gibum Kim (Hwaseong-si, South Korea), Myunggil Kang (Suwon-si, South Korea) and Dongwon Kim (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an active fin on the substrate, and a transistor on the active fin. The transistor includes a lower channel layer, an intermediate channel layer, and an upper channel layer sequentially stacked, and a gate structure traversing the active fin, r...